ASD 2023: More Secrets of Area-Selective Atomic Layer Deposition
The 7th Area Selective Deposition Workshop (ASD 2023) is happening until April 5 at Incheon National University, Incheon, Korea! Find it at www.asd2023.com. Make sure to check for updates on the ASD2023 twitter account: @asd2023korea. The conference is chaired by Professor Han Bo Ram Lee (website, Twitter & LinkedIn).
Area-selective atomic layer deposition (AS-ALD) is a thin film deposition technique used in materials science and nanotechnology. It involves selectively depositing thin films on specific substrate surface regions while leaving other surface regions untreated.
Illustration of area-selective atomic layer deposition (ASALD): (a) surface with chemically dissimilar areas, where ALD growth occurs (growth area) or does not readily occur (non-growth area); (b) surface where a blocking agent has been selectively adsorbed on the non-growth area; and (c) surface after completion of ASALD, where the material has grown only on the targeted growth area. If the difference in selectivity between the two areas is large enough, a blocking agent is not needed and step (b) can be skipped. Based on: doi - 10.1021/acs.chemmater.8b03454. Fenne van Ommen is acknowledged for helping with drawing this image.
AS-ALD is accomplished through the use of surface functionalization techniques or the use of selective precursors. Surface functionalization can include chemical modification or patterning of the substrate surface to create areas of different surface energy or chemical reactivity. The selective precursors can include those that only react with certain functional groups on the substrate surface or those that only react with certain crystallographic planes.
By selectively depositing thin films on specific substrate regions, AS-ALD can create complex nanostructures with precise control over the placement of materials. It has potential applications in microelectronics, catalysis, and sensing. AS-ALD is an active area of research and development, and there is ongoing work to optimize the technique for different materials and substrates.
You can check more about AS-ALD in this nice lecture.
ASD techniques are essential for the development of next-gen technologies, especially for sub-10 nm transistor fabrication in the semiconductor industry. This workshop brings together industry leaders and academics to share the latest in ASD research, applications, and emergent processes.
The ASD Fundamentals conference is set to feature an impressive lineup of speakers, each of whom is an expert in their respective field.
Invited Presentations and Invited Speakers:
- ASD by intrinsic surface properties
Prof. Gregory Parsons, North Carolina State University, USA
- Find 10 Differences Between These Precursors: ALD vs ASD Surface Chemistry
Prof. Sean Barry, Carleton University, Canada
- ASD by Passivation: from Self-assembled Monolayers to Small Molecule Inhibitors
Prof. Adrie Mackus, Eindhoven University of Technology, Netherlands
- Surface reaction kinetics for Inherent Selective Atomic Layer Deposition
Prof. Rong Chen, Huazhong University of Science and Technology, China
- Small molecule inhibitor-based approaches for area-selective deposition from first principles
Prof. Ralf Tonner-Zech, Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Germany
- The mechanisms of precursor blocking during area-selective ALD using small molecule inhibitors
Dr. Marc Merkx, Eindhoven University of Technology, Netherlands
- Study on fabrication of seam-less gap filling through controlling of surface reactions in 3D structures
Dr. Eun Hyoung Cho, Samsung Advanced Institute of Technology, Korea
- Area selective atomic layer deposition enabled by writeable functional group patterning
Prof. Matthias Young, University of Missouri, USA
- Selectively grown ALD-ZnO bottomless barrier for Advanced Cu Metallization
Prof. Soo Hyun Kim, UNIST, Korea
- Area Selective Deposition for Bottom-up Nanoelectronic Device Synthesis
Prof. Mike Filler, Georgia Tech, USA
- Strategies for Area-Selective Deposition at an Industrial Scale
Dr. Keith Wong, Applied Materials, USA
- Self-Assembling Monolayers vs Small Molecule Inhibitors in Area-Selective Deposition
Dr. Rachel Nye, Lam Research, USA
- Area selective dielectric deposition beyond the scaling limit
Dr. Sang Hoon Ahn, Samsung Electronics, Korea
- Selective Deposition for Fully Self-Aligned Via: progress, challenges and opportunities
Dr. Dina Triyoso, TEL, USA
- ALD for 2D TMDCs and Other Related Emerging Materials
Prof. Hyungjun Kim, Yonsei University, Korea
- ALD Technology for Disruptive Semiconductor Devices: Evolutionary to Revolutionary Paths
Dr. Seiyon Kim, Fellow, SK hynix, Korea
- Enabling Advanced Metallization with Selective Deposition
Dr. Zhebo Chen, Director of Global Product Management, Applied Materials, USA
- The Application of Selective Area Deposition in the 3D Semiconductor Structure
Dr. Hanjin Lim, VP of Technology, Samsung Electronics, Korea
- Precursor Design Concept for Semiconductor and Display Process
Dr. Sang Ick Lee, VP of Technology, DNF, Korea
- Enabling Process Technologies for Continuous Logic Scaling Towards 2-nm-node and Beyond
Dr. Tomonari Yamamoto, Vice President, TEL, Japan
- 3DIC Introduction and What Can ALD Do in 3DIC
Prof. Kuan-Neng Chen, National Yang Ming Chiao Tung University, Taiwan
- Ligand Engineering: Gateway to New Precursors for Atomic Layer Processing
Prof. Anjana Devi, Ruhr-Universität Bochum, Germany
Tweets on the event:
A nice linkedin post from Rachel Nye, who gave an invited presentation: